PART |
Description |
Maker |
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
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IRF[International Rectifier]
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IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
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International Rectifier
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FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
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Fairchild Semiconductor
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IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
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IRF[International Rectifier]
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FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM 100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Fairchild Semiconductor, Corp.
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JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package HEXFET? TRANSISTORS From old datasheet system POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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IRF[International Rectifier]
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IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
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IRF[International Rectifier]
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HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 39A条(丁)|63AB 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp. Intersil, Corp.
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IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements 100V, Combination 2N-2P-CHANNEL -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
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FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FQT7N10L FQT7N10LTF FQT7N10LL99Z |
100V N-Channel Logic Level QFET 100V LOGIC N-Channel MOSFET 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
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FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
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